Study on the Effects of Radiation in 4H-SiC Devices

碩士 === 國立清華大學 === 電子工程研究所 === 107

Bibliographic Details
Main Authors: Shih, Hua-Yu, 施驊育
Other Authors: Huang, Chih-Fang
Format: Others
Language:zh-TW
Published: 2019
Online Access:http://ndltd.ncl.edu.tw/handle/3949ja
id ndltd-TW-107NTHU5428010
record_format oai_dc
spelling ndltd-TW-107NTHU54280102019-05-30T03:57:30Z http://ndltd.ncl.edu.tw/handle/3949ja Study on the Effects of Radiation in 4H-SiC Devices 輻射效應對4H碳化矽元件影響 Shih, Hua-Yu 施驊育 碩士 國立清華大學 電子工程研究所 107 Huang, Chih-Fang 黃智方 2019 學位論文 ; thesis 90 zh-TW
collection NDLTD
language zh-TW
format Others
sources NDLTD
description 碩士 === 國立清華大學 === 電子工程研究所 === 107
author2 Huang, Chih-Fang
author_facet Huang, Chih-Fang
Shih, Hua-Yu
施驊育
author Shih, Hua-Yu
施驊育
spellingShingle Shih, Hua-Yu
施驊育
Study on the Effects of Radiation in 4H-SiC Devices
author_sort Shih, Hua-Yu
title Study on the Effects of Radiation in 4H-SiC Devices
title_short Study on the Effects of Radiation in 4H-SiC Devices
title_full Study on the Effects of Radiation in 4H-SiC Devices
title_fullStr Study on the Effects of Radiation in 4H-SiC Devices
title_full_unstemmed Study on the Effects of Radiation in 4H-SiC Devices
title_sort study on the effects of radiation in 4h-sic devices
publishDate 2019
url http://ndltd.ncl.edu.tw/handle/3949ja
work_keys_str_mv AT shihhuayu studyontheeffectsofradiationin4hsicdevices
AT shīhuáyù studyontheeffectsofradiationin4hsicdevices
AT shihhuayu fúshèxiàoyīngduì4htànhuàxìyuánjiànyǐngxiǎng
AT shīhuáyù fúshèxiàoyīngduì4htànhuàxìyuánjiànyǐngxiǎng
_version_ 1719196667354284032