Study of Super Critical Fluid Passivation Technique with Advanced RRAM, Thin-film Transistor and Solar Cell Devices

• Main Authors: Hsin-Lu Chen, 陳信儒
• Other Authors: Tai-Fa Young
• Format: Others
• Language: en_US
• Published: 2019
• Online Access: http://ndltd.ncl.edu.tw/handle/wdayvu

博士 === 國立中山大學 === 機械與機電工程學系研究所 === 107 === A novel, non-destructively, low-temperature and high pressure super critical fluid (SCF) passivation treatment is employed to improve the performance of electron device. Three kinds of rising electron devices were used to demonstrated the passivate ability of SCF technique, which are resistive random access memory (RRAM), thin film transistor (TFT), and thin film solar cell. The RRAM device, the first section will be discussed, which is a promising candidate for next generation memory device. A new potential material Germanium oxy-sulfide is studied as RRAM active layer and discussed the memory performance. Then, water mixed carbon dioxide SCF treatment was introduced to consider the relationship of defect passivation and memory performance. The off state resistance has over ten times increased to enlarge the memory window. The second demonstrated device is In-Ga-Zn-O (IGZO) TFT. IGZO exhibits several superior material and electrical properties. Besides, IGZO is an oxygen vacancy sensitive material. The turn on current of IGZO TFT slightly decayed after pure water mixed carbon dioxide treatment. Hence, ultra-violet (UV) light irradiation during SCF treatment is introduced due to the breaking weak bonding. The carrier mobility can be enhanced about 70% after UV light enhanced SCF passivation. The last demonstration presented amorphous silicon thin film solar cell device. SCF treatment has introduced to passivate the defects between heterojunction stacks. The output current under indoor light condition was improved by about 80% after treatment. A capacitance-voltage based drive-level capacity profiling (DLCP) measurement was used to analysis the transform of defect density distribution before and after passivation. The defect density of heterojunction interface can reduce about an order of magnitude after passivation. Finally, a reaction model has proposed to explain the mechanism of SCF with thin-film and the UV light assistance.