| Summary: | 碩士 === 國立中山大學 === 電機工程學系研究所 === 107 === The inverter discussed in this paper is different from the traditional CMOS inverter. This inverter is a vertical structure called CFET. It uses Monolithic process technology. The n-type thin film transistor is the bottom device and the p-type thin film transistor is top device saves half the area compared to conventional CMOS, but it also greatly increases the process difficulty.
In this paper, the channel thickness, gate oxide layer and channel length of the modulation component are analyzed, and the difference in electrical properties is analyzed. The thinner the channel thickness is, the VTH is shifted to large voltage, the S.S. is better, the ION is degraded, and the VTH and ION degradation are attributed to influence of defects in the grain boundary, S.S. is better attributed to the increase of gate control ability; Thinner the gate oxide layer, the VTH is shift to the small voltage, the S.S. is better, the ION is higher, are attributed to the gate control ability; The channel length effect VTH is shifted to a small voltage, the S.S. is degraded, the ION is increased, so device is opened earlier, and the ION is higher attributed to defect of the grain boundary, and the S.S. degradation is attributed to gate control ability.
The characteristics of the inverter are closely related to the small scale of the device. The thickness of the microchannel and the thickness of the gate oxide layer improve the inverter switching voltage and Gain. The length of the microchannel shortens the switching voltage of the inverter and the Gain does not change. This paper discusses the five regions of the inverter characteristics, which represent the different switching states of the two transistors, A: n-type thin film transistor cut-off region, p-type thin film transistor linear region; B: n-type thin film transistor cut-off region, p-type thin film transistor saturation region; C: n-type thin film transistor saturation region, p-type thin film transistor linear region; E: n-type thin film transistor saturation region, p-type thin film transistor saturation region; D : n-type thin film transistor linear region, p-type thin film transistor saturation region.
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