Study on The Resistive Switching Properties and Reliability of Hafnium Oxide Film Resistance Random Access Memory

Study on The Resistive Switching Properties and Reliability of Hafnium Oxide Film Resistance Random Access Memory

碩士 === 國立中山大學 === 材料與光電科學學系研究所 === 107

Bibliographic Details
Main Authors: Kai-Lin Huang, 黃凱琳
Other Authors: Tsung-ming Tsai
Format: Others
Language:zh-TW
Published: 2019
Online Access:http://ndltd.ncl.edu.tw/handle/995kg9
Description
Summary:碩士 === 國立中山大學 === 材料與光電科學學系研究所 === 107

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