Growth of Gallium Oxide on (001) LiGaO2 Substrate by Hydride Vapor Phase Epitaxy

碩士 === 國立中山大學 === 材料與光電科學學系研究所 === 107 === In this thesis, we use (001) LiGaO2 (LGO) substrate to grow on epitaxial gallium oxide (Ga2O3) by hydride vapor phase epitaxy (HVPE). Pure gallium metal is used as gallium atom source. High purity oxygen and nitrogen are used as reaction gas and carrier gas...

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Bibliographic Details
Main Authors: Chia-hung Chung, 鍾佳宏
Other Authors: Ming-Chi Chou
Format: Others
Language:zh-TW
Published: 2018
Online Access:http://ndltd.ncl.edu.tw/handle/5uc2bh

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