Growth of Gallium Oxide on (001) LiGaO2 Substrate by Hydride Vapor Phase Epitaxy
碩士 === 國立中山大學 === 材料與光電科學學系研究所 === 107 === In this thesis, we use (001) LiGaO2 (LGO) substrate to grow on epitaxial gallium oxide (Ga2O3) by hydride vapor phase epitaxy (HVPE). Pure gallium metal is used as gallium atom source. High purity oxygen and nitrogen are used as reaction gas and carrier gas...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/5uc2bh |