Investigation of Crystal Properties of Topological Insulator Bi(x)Sb(2-x)Te3 by Melting Growth Method
碩士 === 國立中山大學 === 材料與光電科學學系研究所 === 107 === BixSb2-xTe3 crystal were grown by melting growth method. The growth conditions and the effect of different ratios of Bi and Sb in BixSb2-xTe3 crystal were investigated. The topological properties had been confirmed for BixSb2-xTe3 crystal by angle resolutio...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/rreys9 |
| Summary: | 碩士 === 國立中山大學 === 材料與光電科學學系研究所 === 107 === BixSb2-xTe3 crystal were grown by melting growth method. The growth conditions and the effect of different ratios of Bi and Sb in BixSb2-xTe3 crystal were investigated.
The topological properties had been confirmed for BixSb2-xTe3 crystal by angle resolution photoelectron spectroscopy（ARPES) . X-ray diffraction(XRD) and transmission electron microscope（TEM）was used to confirm the crystal structure and the c-axis lattice constant of the samples. Electron probe microanalyzer（EPMA） was used to investigate the element compositions of the crystal samples. Raman spectroscopy was used to study the crystal vibration mode, rotation mode and bond transition. The main carrier and carrier concentration in the crystal are deduced by measuring the Hall effect at 300K.
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