| Summary: | 碩士 === 國立高雄科技大學 === 化學工程與材料工程系 === 107 === In this study, the Ni-doped ZnCo2O4 thin-films prepared by sol-gel method. The precursor solution was coated on glass substrate by a spin coating method, the were annealed at 400°C for 2 hours under an oxygen. The XRD results, ZnCo2O4 phase can be successfully prepared by Ni-doping 0%~120%. The 150% is ZnCo2O4 and NiO phases. The additional 180% and 200% was converted to pure NiO phases. the lattice constant of condition were calculated according to phases, and that found Ni-doping causes size change.The surface morphology of the surface was observed by FE-SEM. The Ni-doped 0%~150% were dense and flat surfaces, and 180% and that 200% were found to be cracked due to poor coating. According to UV-vis analysis, the maximum transmittance of Ni-doped 0%~120% visible light region were about 30~56%, and the band gap respectively of 2.33eV~2.53eV and 3.61eV~3.90eV. The Ni-doped 150%~200% were the Optical characteristics of NiO the maximum penetration to 60~65%, and the band gap of 4.01eV~4.04eV. In addition, the ZnCo2O4 phase has a high conductivity in Ni-doping 70%~120%, and the best electrical conductivity of Ni-doped 90% was carrier concentration (1.24±0.19)1018 cm-3, and the resistance was 3.39±0.01 Ωcm, and the conductivity was (2.95±0.01)10-1 S/cm.Finally, the conditions of Ni-doped 1%~100% were analyzed by X-ray photoelectron spectroscopy. It was found that the 3+ ion content of Co 2p3/2 and Ni 2p3/2 orbital affected the amount of anti-site defects, which made Majority carriers The quantity changes and affects the electrical properties. The Zn 2p and O1s orbital show characteristic of ZnCo2O4.
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