Fully-MOSFET Bandgap Voltage Reference Circuit with Self-cascade Architecture

• Main Authors: Wang, Wei-Shin, 王惟昕
• Other Authors: Chen, Hsun-Hsiang
• Format: Others
• Language: zh-TW
• Published: 2019
• Online Access: http://ndltd.ncl.edu.tw/handle/vhax89

碩士 === 國立彰化師範大學 === 電子工程學系 === 107 === This thesis presents a fully-MOSFET band-gap voltage reference circuit with low temperature coefficient. The circuit consists of a generator of PTAT, a generator of CTAT and a current source. The generator of PTAT utilize the self-cascade MOSFETs to generate the PTAT voltage, and the generator of CTAT is a MOSFET gate to source voltage, this voltage is a CTAT voltage when the MOSFET is operated in sub-threshold region. We use TSMC 0.18 μm CMOS technology to design the circuit in this thesis. The pre-simulation results are when VDD is at 1.8 V and temperature is ranging from -25 °C to 110 °C, the output voltage is 895 mV, the temperature coefficient is 9.7 ppm/°C, the power consumption is 280.9 nW, and the PSRR is -41.7 dB. Under the same condition, the post-simulation results are as follow: the output voltage is 881 mV, the temperature coefficient is 33 ppm/°C, the power consumption is 239.5 nW, and the PSRR is -41 dB.