Investigations of Inverted-type Double Perovskite MAxCs1-xPb(IxBr1-x)3 Thin Film Solar Cells

• Main Authors: Pin-Chia Tseng, 曾品嘉
• Other Authors: 陳昇暉
• Format: Others
• Language: zh-TW
• Published: 2019
• Online Access: http://ndltd.ncl.edu.tw/handle/g7p7kp

碩士 === 國立中央大學 === 光電科學與工程學系 === 107 === The highest power conversion efficiency (PCE) record of CH3NH3PbI3 based thin-film solar cells is up to 24.2%. In order to improve the device stability of the perovskite solar cell , researchers are engaged to modify the light absorbing material (LAM), electron transport layer (ETL) and hole transport layer (HTL). In this research, the double perovskite thin films were applied to the LAM. The structural, surface, optical and excitonic properties of double perovskite thin films were investigated to understand the device physics. The device structure is Ag/PCBM/perovskite/PEDOT:PSS/ITO/glass. Ag and ITO are used as the cathode and anode, respectively. PCBM and PEDOT:PSS are used as the ETL and HTL, respectively. MAxCs1-xPb(IxBr1-x)3 double perovskite thin film is used as the LAM. When the MA0.8Cs0.2Pb(I0.8Br0.2)3 thin film was used as the LAM, the best PCE of 9.71% can be obtained, which corresponded to the short-circuit current density of 15.7 mA/cm2, the open-circuit voltage of 1.01 V and the fill factor of 59.75%. After 120 days of stability measurement, the PCE of the MA0.8Cs0.2Pb(I0.8Br0.2)3 thin film solar cell decreased by 42.21% ; the PCE of the MAPbI3 thin film solar cell decreased by 53.91% ,so MA0.8Cs0.2Pb(I0.8Br0.2)3 thin film solar cell is relatively stable.