Study of Copper Gated HEMTs for High Power Device Applications
碩士 === 國立交通大學 === 國際半導體產業學院 === 107 === Compared with common Si based devices, GaN based devices have high electron mobility, high breakdown voltage and can be operated at high temperature. That is very suitable for high power and high frequency electric product industry. Especially in high power pr...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2019
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/syggk9 |