| Summary: | 碩士 === 國立交通大學 === 國際半導體產業學院 === 107 === In this thesis, we study ZnON thin films deposited by reactive sputtering and investigate the influence of the N2 flow rate on the film properties. We also evaluate the effects of three kinds of the post-deposition treatments, including the AP thermal annealing, high-vacuum annealing, and Ar plasma treatment, on the properties of ZnON with Hall measurements. The treated films have an obvious promotion in long-term stability test as compared to the as-deposited films. XPS analysis is conducted to figure out the chemical bond ratio of the films. Based on the results of the material analyses, we fabricated the ZnON TFTs with inverted-staggered bottom-gate structure for studying the electrical performance of the devices that received various treatments.
In this work we also propose the use of ion implantation to incorporate N into an ultra-thin ZnO film for forming ZnON. To make a comparison, two different ion implantation procedures are designed, and two different dosages are set to get the O/N=5:1 and 1:1 in the channel film. Effects of post-implantation annealing temperature on the operation performance of the devices are also investigated.
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