A Three-Level Single-Inductor Triple-Output Converter with an Adjustable Flying-Capacitor Technique for Low Output Ripple and Fast Transient Response

碩士 === 國立交通大學 === 電控工程研究所 === 107 === Advanced CMOS devices below 28nm allow supply voltages lower than 1V. For applications with higher input voltage (VIN) in such devices, stacked MOSFET structures with a three-level (3L) technology are commonly employed. The stacked structure can also reduce the...

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Bibliographic Details
Main Authors: Chu, Li-Cheng, 朱立程
Other Authors: Chen, Ke-Horng
Format: Others
Language:en_US
Published: 2018
Online Access:http://ndltd.ncl.edu.tw/handle/7zpm8m

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