Design of Low Voltage Vertical Channel-Tunnel FET (VC-TFET) Using Ge/SiGe Materials
碩士 === 國立交通大學 === 電機資訊國際學程 === 107 === Abstract In this thesis, tunneling field-effect-transistor (TFET) based on the mechanism of band-to-band tunneling (BTBT), has been studied extensively. TFET is considered as a potential low voltage and low power transistors in certain applications for next ge...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/k3s7eq |