Numerical Study of RTN Amplitude in SiNWFETs
碩士 === 國立交通大學 === 電信工程研究所 === 107 === In recent years, the miniaturization of transistors has progressed according to the device scaling rule and then the geometry of the most advanced transistor reaches in the level of nano-meters. The device structure of transistor also has substantially changed...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2018
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/3fyxb6 |