Optical Characterizations of Low Temperature p-GaN Thin Films Grown by Two-Heater MOCVD
碩士 === 國立交通大學 === 電子物理系所 === 107 === In this thesis, we use the home-made Two-Heater MOCVD to grow the p-GaN thin films. The purpose of the study is to grow low temperature p-GaN required to protect the active layer of long wavelength (orange, 595 nm)LEDs. We investigate on low substrate temperature...
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| Format: | Others |
| Language: | zh-TW |
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2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/svb3gd |
| Summary: | 碩士 === 國立交通大學 === 電子物理系所 === 107 === In this thesis, we use the home-made Two-Heater MOCVD to grow the p-GaN thin films. The purpose of the study is to grow low temperature p-GaN required to protect the active layer of long wavelength (orange, 595 nm)LEDs. We investigate on low substrate temperature(850°C) growth p-GaN with the unique ceiling temperature to discuss the ceiling temperature effect on the low-temperature growth p-GaN’s optical properties.
We mainly use PL experiment to analyze the optical characteristics of the ceiling temperature series of samples with low substrate temperature (850 °C). Low T PL experiments are 17K fixed power experiments and 17K power dependent experiments. The PL spectral information (Peak, FWHM, Intensity) of the ceiling temperature series p-GaN samples obtained by PL experiment is further discussed. And we speculate the change in impurity concentration in the thin film and the crystal quality are affected by the ceiling temperature.
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