Resistive Switching Behavior and Synaptic Properties in TaOx-based RRAM Device
碩士 === 國立交通大學 === 電子研究所 === 107 === Resistive random access memory (RRAM) is one of the most promising nonvolatile memory due to its low power consumption, high operation speed, and compatible with the conventional CMOS process. Most importantly, the synaptic plasticity of RRAM was explored for pote...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/y4gba7 |