TiOx-based synaptic memory device for neuromorphic application
碩士 === 國立交通大學 === 電子研究所 === 107 === Neuromorphic computing is expected to emulate brain functions in the near future. There are several nonvolatile memory such as PCRAM, CBRAM, RRAM have been proposed as synaptic memory device. All of above, RRAM is the most promising candidate, due to its several a...
Main Authors: | Chang, Lung-Yu, 張容瑜 |
---|---|
Other Authors: | Tseng, Tseung-Yuen |
Format: | Others |
Language: | en_US |
Published: |
2019
|
Online Access: | http://ndltd.ncl.edu.tw/handle/tq7dfd |
Similar Items
-
Deposition, Properties, and Photocatalysis of TiOX, VOX and TiOX/VOX Films
by: Hui-Chi Chen, et al.
Published: (2002) -
Influences of oxygen vacancy drifting on resistive switching behaviors in TiOx and TaOx based nonvolatile memories
by: Yu-LungChung, et al.
Published: (2015) -
Enhanced Performance in Quantum Dot Solar Cell with TiOx and N2 Doped TiOx Interlayers
Published: (2011) -
Characteristics of TiOx Based RRAM Device Fabricated by Thermal Oxidation
by: Syuan-Hao Mai, et al.
Published: (2011) -
Properties、Deposition and Electrochromic of WOx/TiOx Thin Films
by: Tsung-Lung Lin, et al.
Published: (2003)