Structural Insight on Strain and Ge Content within SiGe Nanosheet Created by Proximal Ge Nanospheres

碩士 === 國立交通大學 === 電子研究所 === 107 === In this thesis, fabrication and characterization of silicon-germanium (SiGe) nanosheet as well as the associated nanosheet channel devices are investigated. By tuning the duration of thermal oxidation, we have demonstrated the precise controllability of penetratio...

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Bibliographic Details
Main Authors: Chen, Chia-Tsong, 陳家驄
Other Authors: Li, Pei-Wen
Format: Others
Language:en_US
Published: 2019
Online Access:http://ndltd.ncl.edu.tw/handle/52bkwf