Negative Capacitance and Ferroelectric Effects of FPE HZO TFTs
碩士 === 國立交通大學 === 電子研究所 === 107 === In this thesis, we investigate back-end-of-line (BEOL) IGZO thin-film transistors (TFTs) on 6-inch wafers with ferroelectric gate dielectric, HZO. The devices were fabricated by the film-profile engineering (FPE) scheme with common-gate configuration. To understan...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/999jb9 |