A Study on Performance Improvement of InGaAs nMOSFETs for Future High Speed and Low Power Applications

A Study on Performance Improvement of InGaAs nMOSFETs for Future High Speed and Low Power Applications

博士 === 國立交通大學 === 電子研究所 === 107

Bibliographic Details
Main Authors: Chang, Po-Chun, 張柏鈞
Other Authors: Chang, Yi
Format: Others
Language:en_US
Published: 2018
Online Access:http://ndltd.ncl.edu.tw/handle/qdum97
id ndltd-TW-107NCTU5428038
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spelling ndltd-TW-107NCTU54280382019-05-16T01:40:47Z http://ndltd.ncl.edu.tw/handle/qdum97 A Study on Performance Improvement of InGaAs nMOSFETs for Future High Speed and Low Power Applications 改善次世代高速低功率砷化銦鎵金氧半場效電晶體效能之研究 Chang, Po-Chun 張柏鈞 博士 國立交通大學 電子研究所 107 Chang, Yi Sze, Min 張翼 施敏 2018 學位論文 ; thesis 127 en_US
collection NDLTD
language en_US
format Others
sources NDLTD
description 博士 === 國立交通大學 === 電子研究所 === 107
author2 Chang, Yi
author_facet Chang, Yi
Chang, Po-Chun
張柏鈞
author Chang, Po-Chun
張柏鈞
spellingShingle Chang, Po-Chun
張柏鈞
A Study on Performance Improvement of InGaAs nMOSFETs for Future High Speed and Low Power Applications
author_sort Chang, Po-Chun
title A Study on Performance Improvement of InGaAs nMOSFETs for Future High Speed and Low Power Applications
title_short A Study on Performance Improvement of InGaAs nMOSFETs for Future High Speed and Low Power Applications
title_full A Study on Performance Improvement of InGaAs nMOSFETs for Future High Speed and Low Power Applications
title_fullStr A Study on Performance Improvement of InGaAs nMOSFETs for Future High Speed and Low Power Applications
title_full_unstemmed A Study on Performance Improvement of InGaAs nMOSFETs for Future High Speed and Low Power Applications
title_sort study on performance improvement of ingaas nmosfets for future high speed and low power applications
publishDate 2018
url http://ndltd.ncl.edu.tw/handle/qdum97
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