The Process Development of a Heterogeneous InGaAs n-MOSFET Device with High Energy Gap InAlAs Back Barrier Layer
碩士 === 國立交通大學 === 照明與能源光電研究所 === 107 === In order to improve the performance of III-V MOSFETs and suppress the leakage current, we have adopted a layer of Indium aluminum arsenide (InAlAs) as a back barrier layer in the device structure. A mesa structure is also applied to improve the isolation betw...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/8pwe5p |