| Summary: | 碩士 === 國立交通大學 === 電機學院電子與光電學程 === 107 === Nowadays, the energy crisis and energy conservation issues are receiving the attention of the public and trying to find solutions. The power supplies have been towards greater power consumption for high frequency applications, requiring higher reverse bias voltages for higher output adapters. Higher voltage spikes or higher switching frequencies are inevitable result of this trend. However, as the operating voltage of the integrated circuit lower, the demands are increasing for the output voltage switching power supply, in order to achieve such a high efficiency power switch.
Trench MOS Barrier Schottky Rectifier (TMBS Rectifier) is favored for excellent performance. Compared to PN junction rectifiers, TMBS rectifiers have ideal low forward conduction voltage, high reverse blocking voltage, and high switch speed, but must reduce reverse leakage current to avoid increasing another power loss during circuit on the off-state.
In this paper, discuss about process conditions of TMBS rectifier and the influence of process variation on the electrical characteristic of the device. The correlation of the related processes is studied under forward bias, reverse blocking voltage and reverse leakage current. The process conditions are more stable, and then promote yield.
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