Investigation on High Performance Ni Induced Lateral Crystallization P-type Poly-Si TFTs with Low Metal Contamination

Investigation on High Performance Ni Induced Lateral Crystallization P-type Poly-Si TFTs with Low Metal Contamination

碩士 === 國立交通大學 === 光電工程研究所 === 107

Bibliographic Details
Main Authors:	Wei, Hsiu-Hsuan, 魏秀軒
Other Authors:	Liu, Po-Tsun
Format:	Others
Language:	en_US
Published:	2018
Online Access:	http://ndltd.ncl.edu.tw/handle/6t6un4

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