Summary: | 碩士 === 國立交通大學 === 光電系統研究所 === 107 === In this study, we used a common desktop ink-jet printer to fabricate electrode of capacitive pressure sensor and replaced ink with PEDOT:PSS solution. In addition, ZnO nanowires were synthesized on Silicon substrate by Vapor-Liquid-Solid method. After that, we doped ZnO nanowires to photoreactive resin and used SLA 3D printer to fabricate dielectric layer with ZnO nanowires. We expected the piezoelectric properties of ZnO nanowires could be helpful to increase the sensitivity of capacitive pressure sensor. The sensitivity of device was the highest at a concentration of 1 wt% of ZnO nanowires, was 9.1 x 10^(-3) kPa^(-1), and enhanced the sensitivity about 5.7 times with respect to pure resin device. The limit of detection was 49 Pa, and the capacitance didn’t distort through 400 compression/release cycles. The response time was 0.25 s and the relaxation time was 0.375 s. The device can be produced with simple, quick and personal method because we used ink-jet printer and SLA printer. This pressure sensor will be more convenient to be applied in electronic skin, wearable devices and touch devices in the future.
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