| Summary: | 碩士 === 國立交通大學 === 光電系統研究所 === 107 === In this thesis, we tried to make ultra-thin III-V solar cells by using indium phosphide epitaxial wafer. The first method is thinning the thickness of substrate of wafer by lapping, but this method has practical difficulties. Because the indium phosphide wafer is fragile, it is easy to break into pieces during lapping.
Second method is to bond the epitaxial indium phosphide wafer to an indium phosphide base wafer by thermo-compression metal bonding, and then etch the substrate of epitaxial indium phosphide by wet etching. During the process, we apply a protective adhesive during the wet etch. After the etching, acetone solution can be applied to remove this adhesive without leaving traces. Finally a thin-film of indium phosphide-based epitaxial layers can be left on the base wafer. Furthermore, photoluminescence spectrum measurement was used to check the active layer properties after bonding and the external quantum efficiency was taken for these thin-film devices.
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