W-Band Injection-Locked Frequency Divider
碩士 === 國立暨南國際大學 === 電機工程學系 === 107 === The design and implementation of W-Band Injection-Locked Frequency Divider (ILFD) are using by 90 nm CMOS process of TSMC. This thesis categorizes into two parts: In the first part, the design of W-band divide-by-2 injection-locked frequency divider of the stru...
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| Format: | Others |
| Language: | en_US |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/72wqa4 |
| Summary: | 碩士 === 國立暨南國際大學 === 電機工程學系 === 107 === The design and implementation of W-Band Injection-Locked Frequency Divider (ILFD) are using by 90 nm CMOS process of TSMC. This thesis categorizes into two parts:
In the first part, the design of W-band divide-by-2 injection-locked frequency divider of the structure has the distributed-LC, forward-body-bias technique and inductive peaking to improve the locking range and reduce the power consumption. The output pole uses the common source amplifier to boost output power. The wafer of W-band divide-by-2 injection-locked frequency divider merged multiple-technology is completed.
In the second part, the design of W-band divide-by-4 injection-locked frequency divider of the structure has a Darlington cell with LC resonance series distributed-LC to enhance the oscillation frequency and save power consumption. Also, the circuit uses inductive peaking techniques to boost the injection current which improves the locking range. The wafer of W-band divide-by-4 injection-locked frequency divider with Darlington is implemented.
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