| Summary: | 碩士 === 國立成功大學 === 奈米積體電路工程碩士學位學程 === 107 === There are many iterative methods to solve the partial differential equations in the numerical calculations. In this work, we use monotone iterative method to solve the Drift Diffusion model and simplify the current continuity equations to accelerate the computation. Shockley Read Hall (SRH) and band to band tunneling (BTBT) are considered in the current continuity equations accounting for the minimum and leakage currents of a transistor. In the numerical algorithm, we consider the convergence and consumption of system together with the explicit and implicit methods.
In our research, we model the gate-induced drain leakage (GIDL) currents successfully and discuss the results. As CMOS is scaled down, quantum physics becomes more and more important because of the wave nation of electrons and a quantum simulator (such as non-equilibrium Green’s function NEGF) is requested to correctly predict the device performance. Although the open source of NEGF is available (such as nanoMOS in nanohub), it only considers quantum transport on the conduction bands for electrons. This means all mechanisms involving band to band transitions have been neglected, underestimating the off-currents of a device. This research models the GIDL currents and discusses the Id verse Vg current characteristics and electric field of devices with different channel length by a semi-classical method including hole transport.
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