Investigation of Ga2O3 photodetectors using plasma-enhanced atomic layer deposition system

碩士 === 國立成功大學 === 光電科學與工程學系 === 107

Bibliographic Details
Main Authors:	Meng-XianShen, 沈孟憲
Other Authors:	Hsin-Ying Lee
Format:	Others
Language:	zh-TW
Published:	2019
Online Access:	http://ndltd.ncl.edu.tw/handle/n2en2u

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spelling	ndltd-TW-107NCKU56140552019-10-26T06:24:19Z http://ndltd.ncl.edu.tw/handle/n2en2u Investigation of Ga2O3 photodetectors using plasma-enhanced atomic layer deposition system 電漿增強式原子層沉積系統製備氧化鎵光檢測器之研究 Meng-XianShen 沈孟憲碩士國立成功大學光電科學與工程學系 107 Hsin-Ying Lee 李欣縈 2019 學位論文 ; thesis 73 zh-TW
collection	NDLTD
language	zh-TW
format	Others
sources	NDLTD
description	碩士 === 國立成功大學 === 光電科學與工程學系 === 107
author2	Hsin-Ying Lee
author_facet	Hsin-Ying Lee Meng-XianShen 沈孟憲
author	Meng-XianShen 沈孟憲
spellingShingle	Meng-XianShen 沈孟憲 Investigation of Ga2O3 photodetectors using plasma-enhanced atomic layer deposition system
author_sort	Meng-XianShen
title	Investigation of Ga2O3 photodetectors using plasma-enhanced atomic layer deposition system
title_short	Investigation of Ga2O3 photodetectors using plasma-enhanced atomic layer deposition system
title_full	Investigation of Ga2O3 photodetectors using plasma-enhanced atomic layer deposition system
title_fullStr	Investigation of Ga2O3 photodetectors using plasma-enhanced atomic layer deposition system
title_full_unstemmed	Investigation of Ga2O3 photodetectors using plasma-enhanced atomic layer deposition system
title_sort	investigation of ga2o3 photodetectors using plasma-enhanced atomic layer deposition system
publishDate	2019
url	http://ndltd.ncl.edu.tw/handle/n2en2u
work_keys_str_mv	AT mengxianshen investigationofga2o3photodetectorsusingplasmaenhancedatomiclayerdepositionsystem AT chénmèngxiàn investigationofga2o3photodetectorsusingplasmaenhancedatomiclayerdepositionsystem AT mengxianshen diànjiāngzēngqiángshìyuánzicéngchénjīxìtǒngzhìbèiyǎnghuàjiāguāngjiǎncèqìzhīyánjiū AT chénmèngxiàn diànjiāngzēngqiángshìyuánzicéngchénjīxìtǒngzhìbèiyǎnghuàjiāguāngjiǎncèqìzhīyánjiū
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Investigation of Ga2O3 photodetectors using plasma-enhanced atomic layer deposition system

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