| Summary: | 碩士 === 國立成功大學 === 材料科學及工程學系 === 107 === Interface improvement of hybrid solar cells (HSCs) by using the cheap method via nitric acid solution to grow thin silicon dioxide between the silicon nanowires (SiNWs) and PEDOT:PSS was performed. The power conversion efficiency (PCE) of HSCs without applying surface treatment was 10.06%, open voltage (Voc) of 0.526V, current density of 32.79 mA/cm2. After exploiting surface treatment by immersing 300 nm Si nanowires (SiNWs) into 16.25% of HNO3 solutions, the tremendous enhancement on the performance of SiNWs/PEDOT:PSS based HSCs with PCE of 12.41%, Voc of 0.546V, current density of 36.36 mA/cm2, fill factor of 62.5% was demonstrated. These results reveal that the silicon dioxide would eliminate the defects and dangling bonds appearing in SiNWs and decrease the interface recombination to create the well-established p-n junction. In addition, the results elucidate that this facile interfacial treatment could enhance the open voltage remarkably as well as reach the superior PCE.
|
|---|
