Development of Low-power Consuming 2D Layered InSe Tribotronics for Logic-circuit Applications
碩士 === 國立中興大學 === 奈米科學研究所 === 107 === This study demonstrated the fabrication of a field effect transistor (FET) with layered indium selenide (InSe) used as a channel. The InSe FET exhibits a high carrier mobility and current on/off ratio. In addition, through the combination of an indium-doped InSe...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/cgi-bin/gs32/gsweb.cgi/login?o=dnclcdr&s=id=%22107NCHU5759003%22.&searchmode=basic |