| Summary: | 碩士 === 國立中興大學 === 奈米科學研究所 === 107 === This study demonstrated the fabrication of a field effect transistor (FET) with layered indium selenide (InSe) used as a channel. The InSe FET exhibits a high carrier mobility and current on/off ratio. In addition, through the combination of an indium-doped InSe FET and a nano-triboelectric generator, the InSe triboelectric FET (w/In InSe T-FET) successfully manipulated the InSe generating FET. Moreover, the negative electrostatic potential can be generated by adjusting the distance between the two frictional charged layers in triboelectric. The electrostatic type can be used as a gate voltage to control the charge carrier transport behavior in the InSe channel. Furthermore, from the surface charge doping of the indium layer, the InSe generating FET shows excellent operational reliability and sensitivity. Based on the low operational voltage of 0.1 volt and external friction, the InSe FET has an extremely high current on/off ratio of 106. The InSe FET also plays an important role as a power-saving tactile sensor. The InSe generating FET successfully senses the "INSE" in the Morse code. In addition, the energy originated from InSe triboelectric FET was enough to drive the light-emitting diode (LED). InSe triboelectric FETs reveal the combined effects of two-dimensional materials and nano-friction generators for low-consumption and intelligent systems. Furthermore, through the InSe triboelectric FETs, the adaptive logic circuits, such as inverters, NOR gates and NAND gates were successfully fabricated. According to the measured results, the obtained InSe triboelectric FET not only exhibits low-consumption system but also the realization of a logic circuit.
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