| Summary: | 碩士 === 國立中興大學 === 精密工程學系所 === 107 === Solar energy plays an important role in renewable energy. Among them, one of the solar cells, copper indium gallium sulfur selenide (CIGSSe), has been paid much attention because of the feasibility of exhibiting a high conversion efficacy on a flexible substrate. Unfortunately, the buffer layer of cadmium sulfide (CdS), commonly used in CIGSSe solar cell, has become a problem due to its environmental pollution. For this reason, the non-toxic buffer layer of zinc oxide sulfur (Zn(O,S) via atomic layer deposition is developed in this study. Besides, the relationship between the buffer layer and the light soaking is systemically investigated by using different Zn(O,S) preparation methods. There are three parts in this study. In the first part, the effect of light soaking on chemical bath deposited Zn(O,S) after post annealing is systemically investigated. The second part is to explore the influence of three different Zn(O,S) buffer layers, prepared by chemical bath deposition, atomic layer deposition and their combination, on the conversion efficiency and the light soaking. The third part is to develop and optimize the Zn(O,S) buffer layers with dual layer structure. Our result shows that the buffer layer using dual layer structure can provide excellent performance and inhibit the light soaking effect. The device conversion efficiency can be increased from 15.5% to 16.5% because of the improvement of the coverage and the shunt resistance. The device after the anti-reflection coating can deliver a conversion efficiency of 17.06%.
|
|---|
