Comparison of photonic properties between Cu and Li-doped ZnO nanorods

• Main Authors: Cheng-Han Lin, 林成翰
• Other Authors: Zingway Pei
• Format: Others
• Language: zh-TW
• Published: 2019
• Online Access: http://ndltd.ncl.edu.tw/cgi-bin/gs32/gsweb.cgi/login?o=dnclcdr&s=id=%22107NCHU5441064%22.&searchmode=basic

碩士 === 國立中興大學 === 電機工程學系所 === 107 === The purpose of this paper is to compare the characteristics of Cu-doping and Cu/Li doping ZnO nanorods with different doping concentrations. The seed layers are fabricated by use of the sol-gel and spin coating method on n-type silicon wafer. Then, the samples are annealed at 500℃ and 700℃ for 1 minutes in a rapid thermal annealing system. In the end, Zn1-xCuxO and Zn1-xCuxO /Zn1-xLixO ZnO nanorods are fabrication by the hydrothermal method at 90℃ for 30 minutes. The doping concentration x is varied from 0.02 and 0.04. From the SEM microstructure analysis, the length of Zn1-xCuxO/Zn1-xLixO nanorods increase than that of Zn1-xCuxO. From the XRD results, the (002) diffraction peak of the Cu/Li doped nanorods are obvious shift to higher angle then that of Zn1-xCuxO. In PL analysis, the defects of Cu/Li doped nanorods increase compared to that of Zn1-xCuxO. The defect is lowest one when the annealing temperature is 500℃ and doped concentration x is 0.04. According to electrical analysis results, Cu/Li doped nanarods have best UV detection characteristic among all samples in this study.The IUV/Idark of the best sample annealed at 700℃ and doped at x=0.04 is 167%.