| Summary: | 碩士 === 國立中興大學 === 電機工程學系所 === 107 === This thesis aims to explore the design of power amplifiers using transformer coupling. The implemented chip uses the TSMC 90nm CMOS and 40nm CMOS process technology support provided by the TSRI. In the design of the power amplifier part is designed with power combination technology, the content contains the principle introduction, circuit and component design, simulation analysis, wafer measurement, results discussion. Firstly, the development of the RF circuit and the derivation of the relevant formula of the power amplifier are introduced. Then, the parameters used in this paper are introduced, and finally the various structures of the power amplifier are analyzed.
Power amplifier design uses transformer-coupled structure for power dividing and combining, which also includes impedance matching function, which analyzes the principle, circuit structure, simulation, measurement and summary of the designed circuit. The circuit design structure of this paper is similar, one is the power amplifier designed in the W band, and the other is to increase the frequency design to the D band. Both circuit designs utilize the characteristics of the differential circuit plus the neutralization capacitor to increase stability, and there is no risk of oscillation during measurement and simulation.
Finally, the research results of each chapter are summarized, and the problems found are discussed and improved, and the future research is improved.
|
|---|
