Improved-Performance Hafnium Disulfide Field-Effect Transistor with Tunnel Contact and its Application
碩士 === 國立中興大學 === 物理學系所 === 107 === In this study, the electrical properties of hafnium disulfide (HfS2) n-type crystal are studied. Because HfS2 is easy to hydrolyze, the application of HfS2 material is carried out by means of mechanical exfoliation method, We present an approach to engineer the co...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2019
|
| Online Access: | http://ndltd.ncl.edu.tw/cgi-bin/gs32/gsweb.cgi/login?o=dnclcdr&s=id=%22107NCHU5198014%22.&searchmode=basic |