The Growth of Ultrathin ZnO Nanowire
碩士 === 明志科技大學 === 材料工程系碩士班 === 107 === In this study，the buffer layer of zinc oxide films with preferred orientation were deposited directly on Corning glass substrate by magnetron sputtering.The nanostructures growth of zinc oxide was synthesized sequentially on the zinc oxide buffer layer by hydro...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/33hbtv |
| Summary: | 碩士 === 明志科技大學 === 材料工程系碩士班 === 107 === In this study，the buffer layer of zinc oxide films with preferred orientation were deposited directly on Corning glass substrate by magnetron sputtering.The nanostructures growth of zinc oxide was synthesized sequentially on the zinc oxide buffer layer by hydrothermal process with zinc nitrate and hexamethylene-tetramine.The lengh and scope of the growth of ZnO nanowire was increased with increasing reaction time as the nitrate zinc and hexamethylene-tetramine was 5×10-3 M and1×10-2 M at temperature of 95℃. The diameter of the zinc oxide nanowire is less than 20 nm under the condition of 10-12 h.The diameter of the nanowire has an increasing trend after 16 h. We found that the length does not grow upwards until a certain time is reached and the lateral growth begins to widen the diameter of the zinc oxide nanowire. The temperature causes the zinc oxide nanowire to have a slender tendency to be prepared into an ultrathin zinc oxide nanowire. Applied to PCE provides a path for electronic straight-through and thus increases solar cell efficiency
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