| Summary: | 碩士 === 龍華科技大學 === 機械工程系碩士班 === 107 === In this study Vanadium dioxide (VO2) films prepared by use radio frequency magnetron sputtering (RF), Vanadium metal target(purity: 99.99%) and Vanadium dioxide target, Argon (Ar) as plasma gas, oxygen as reaction gas, sputtering VO2 on glass substrate. Using Taguchi experimental design L9 (34) direct table, change analysis to study the experimental parameters of VO2 film parameter one: ZnO buffer (0, 30, 90 nm), working pressure (3, 4.5, 6 mtorr), RF working power (60, 100, 140 W), substrate temperature (room, 120, 240 oC). Parameter two : deposition time (10, 20, 30 mins), working pressure (5, 5.5, 6 mtorr), RF working power (60, 100, 140 W), substrate temperature (room, 120, 240 oC).
The results show that the first group of experimental parameters, the most important factor affecting the phase transition temperature of VO2 film is the working pressure, followed by the thickness of ZnO buffer layer film. The second set of experimental parameters, the important factors affecting the phase transition temperature of VO2 film, are deposition time and working pressure. Nanoindentation analysis showed that the elastic recovery of VO2 film was 58.29~61.28%. After annealing, it showed that the film transmittance was improved, the phase transition temperature was not easily recognized, and the elastic recovery and deformation resistance were reduced.
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