Preparation of Silver-doped Antimony Telluride Thermoelectric Thin Films by Co-sputtering Method and Characteristics
碩士 === 高苑科技大學 === 電子工程研究所 === 107 === In this study, RF magnetron sputtering was used at different substrate disk table distance (0cm, 1cm, 2cm, 3cm, and 4cm), and fixed power 35W, time 60 minutes, process pressure 5.0×10-3 torr, argon flow rate 30sccm, sputtered on a Silicon wafer substrate to prep...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/75n5ut |