Preparation of Silver-doped Antimony Telluride Thermoelectric Thin Films by Co-sputtering Method and Characteristics

• Main Authors: LI,CHUN,I, 李俊億
• Other Authors: Diao，Chien-Chen
• Format: Others
• Language: zh-TW
• Published: 2019
• Online Access: http://ndltd.ncl.edu.tw/handle/75n5ut

碩士 === 高苑科技大學 === 電子工程研究所 === 107 === In this study, RF magnetron sputtering was used at different substrate disk table distance (0cm, 1cm, 2cm, 3cm, and 4cm), and fixed power 35W, time 60 minutes, process pressure 5.0×10-3 torr, argon flow rate 30sccm, sputtered on a Silicon wafer substrate to prepare Sb2Te3 thermoelectric thin film. The Seebeck coefficient 581.3μVK-1 of the preferred Sb2Te3 thermoelectric thin film was obtained by using a disc table distance with a pitch of 4 cm, a power of 35W, a time of 60 minutes, and a pressure of 5.0×10-3 torr. The resistivity was 0.1393Ω-cm and the power factor was 0.161μWm-1K-2. Furthermore, at different powers (25W, 30W, 35W, 40W and 45W), and the fixed disc stage spacing of 4cm, time 60 minutes, process pressure 5.0×10-3 torr, argon flow rate 30sccm, in the silicon wafer.The thermoelectric film obtained by sputtering Sb2Te3 hetero-silver (Ag) on the substrate was obtained. Seebeck coefficient 990.08μVK-1 was obtained at a power of 45W, the resistivity was 19.575Ω-cm, and the power factor was 0.005μWm-1K-2, which was not as expected. There is an increase in the effect that the process parameters may not be optimized and further experiments are needed.