Effect of Width and Length of ZnO Channel on Field Effect Transistor
碩士 === 大葉大學 === 醫療器材設計與材料碩士學位學程 === 107 === In this experiment, a ZnO film was deposited on a glass substrate (Corning Engle 2000) using a magnetron RF sputtering system with RF output of 100 W at 150 mtorr working pressure. According to the different devices of MESFET and MISFET, the ZnO thin film...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/rau4bq |
| Summary: | 碩士 === 大葉大學 === 醫療器材設計與材料碩士學位學程 === 107 === In this experiment, a ZnO film was deposited on a glass substrate (Corning Engle 2000) using a magnetron RF sputtering system with RF output of 100 W at 150 mtorr working pressure. According to the different devices of MESFET and MISFET, the ZnO thin film channel is fabricated by using different process of photolithography, and Au is used as the gate metal.
A nitrogen-doped ZnO thin film was fabricated between the gate metal of the type 2 MESFET (MESFET2) and the ZnO thin film channel. In the type 1 and type 2 MISFET (MISFET1 and MISFET2), an aluminum oxide layer was grown between the gate metal and the ZnO thin film channel. A non-conductive polymer is applied as an insulating layer between the gate of the type 3 MISFET (MISFET3) and the ZnO thin film channel. The samples prepared by different processes were analyzed by HP4155A semiconductor characteristic measuring instrument to investigate the voltage modulation effects of different process FETs.
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