| Summary: | 碩士 === 國立中正大學 === 光機電整合工程研究所 === 107 === Graphene is a suitable material in the application of photodetectors for its high carrier mobility and broad wavelength absorption ability. However, its optical transmittance and the carrier recombination speed is extremely high after illumination, resulting in poor photoresponse. In this study, the visible-light photoresponse of graphene is enhanced by growing Antimony sulfide through chemical bath deposition method on graphene.
Previous experiments have found that strontium sulfide/graphene elements deposited for 6 hours have the best optical responsiveness, but have limited absorption in the red band, that is, when irradiating a 660 nm laser. Therefore, in this experiment, a stack of barium sulfide/graphene elements was fabricated, and two layers of barium sulfide/graphene were used to increase the absorption in the red band. It is hoped that the first layer of barium sulfide/graphene material is formed by a second layer of barium sulfide/graphene material. Failure to effectively absorb light again. Finally, the experimental results show that the stacked strontium sulfide/graphene can effectively increase the absorption of 660 nm laser, and has a response value of 66.6 A/W at 650 nm.
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