Optoelectronic Properties of In2S3-graphene Composite Material by Chemical Bath Deposition

• Main Authors: SIAO,MING-YUAN, 蕭名原
• Other Authors: DING,CHU-JI
• Format: Others
• Language: zh-TW
• Published: 2019
• Online Access: http://ndltd.ncl.edu.tw/handle/2n4z87

碩士 === 國立中正大學 === 光機電整合工程研究所 === 107 === Graphene has a broad absorption wavelength and a very high carrier mobility, and is suitable for use as a photodetector, but the response to light is weak due to the high transmittance and the recombination speed of the carrier generated after illumination. The In2S3 is grown on the surface via chemical bath deposition method to enhance the photoreaction of graphene. We stack different layers of graphene and change different growth times and measure their photoresponsivity. From the experimental results, we found that the In2S3/2 L graphene component deposited for 90 minutes has the best photoresponsivity. Therefore, we used a 405 nm laser as the light source on this component to study the photoelectric characteristics at different voltages and light intensity, and used a Xe lamp to measure the full-spectrum photoresponsivity of the In2S3/2 L graphene component. We found when the wavelength of light is between 400 and 550 nm, the optical responsivity exceeds 200 A / W. The optimal photoresponse values are measured under the illumination of a 500 nm laser at room temperature : spectral responsivity of 413.55 A / W, a detectivity of 1.51 × 1012 Jones. It was confirmed that the In2S3/2 L graphene can improve the light absorption and photoresponsivity of graphene.