| Summary: | 碩士 === 國立中正大學 === 光機電整合工程研究所 === 107 === Graphene has a broad absorption wavelength and a very high carrier
mobility, and is suitable for use as a photodetector, but the response to
light is weak due to the high transmittance and the recombination speed
of the carrier generated after illumination. The In2S3 is grown on the
surface via chemical bath deposition method to enhance the photoreaction
of graphene. We stack different layers of graphene and change different
growth times and measure their photoresponsivity. From the experimental
results, we found that the In2S3/2 L graphene component deposited for 90
minutes has the best photoresponsivity. Therefore, we used a 405 nm
laser as the light source on this component to study the photoelectric
characteristics at different voltages and light intensity, and used a Xe
lamp to measure the full-spectrum photoresponsivity of the In2S3/2 L
graphene component. We found when the wavelength of light is between
400 and 550 nm, the optical responsivity exceeds 200 A / W.
The optimal photoresponse values are measured under the illumination
of a 500 nm laser at room temperature : spectral responsivity of 413.55 A
/ W, a detectivity of 1.51 × 1012 Jones. It was confirmed that the In2S3/2 L
graphene can improve the light absorption and photoresponsivity of
graphene.
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