Ultrasonic Wireless Power Transmission System with Adaptive Wide Input Range Receiver for Implantable Applications

• Main Authors: LIAO, WEI-JUN, 廖尉均
• Other Authors: TSAI, TSUNG-HENG
• Format: Others
• Language: en_US
• Published: 2019
• Online Access: http://ndltd.ncl.edu.tw/handle/wn3t8y

碩士 === 國立中正大學 === 電機工程研究所 === 107 === This thesis presents an ultrasonic wireless power transfer system with a wide input range receiver for implantable medical devices. The received energy and input voltage of the ultrasonic power transmission system are affected by the misalignment of the transducers or the variation of the distance between the transmitter and the receiver. The energy received from the transmitter may not be enough for the back-end implantable medical devices. Moreover, the voltage doubler circuit used in the conventional ultrasonic power transmission systems requires a very large coupling capacitance, which is usually an external capacitor, thereby affecting the volume of the implanted devices. Stabilizing the received energy with variable range of input voltages is critical so that the system can stably supply energy to the back-end implantable medical devices. In this work, a wide input range ultrasonic wireless power transmission receiver with an adaptive high-frequency voltage generator is proposed and implemented. The adaptive high-frequency voltage generator is used together with the input detector to monitor the output of the rectifier and control the appropriate operation mode. The proposed system can be used in implantable medical devices, and the high voltage for driving the ultrasonic transducers is also generated by the circuit. A peak current mode controlled boost converter and a high voltage class D audio power amplifier are designed. The battery voltage is converted to a high voltage level to provide a stable high-voltage AC signal to drive the ultrasonic transducer. The receiver circuit is implemented by Taiwan Semiconductor Manufacturing Company (TSMC) 0.18μm 1P6M CMOS process. The package of the chip is 40S/B and the die area of the proposed chip is 1.2 x 1.2 mm2. The transmitter is implemented by TSMC 0.25μm 1P3M CMOS process. The package of chip is 40S/B and the die area of the proposed chip is 1.5 x 1 mm2.