Fabrication and Performance Studies of Transverse Devices
碩士 === 國立中正大學 === 化學工程研究所 === 107 === In this study, a self-made lateral hot pressing system was used for current-assisted hot pressing to fabricate a lateral thermoelectric element. The material used for this component is p-type Bi0.5Sb1.5Te3, which was first ground to powder of 5 μm in size. The p...
Main Authors: | WU,HONG-KAI, 吳弘凱 |
---|---|
Other Authors: | LIN, TSAO-JEN |
Format: | Others |
Language: | zh-TW |
Published: |
2019
|
Online Access: | http://ndltd.ncl.edu.tw/handle/j7ctw2 |
Similar Items
-
The device fabrication and performance characterization on sub-micron GaN HEMT
by: Wen-Kai Wang, et al.
Published: (2006) -
Fabrication and Application of Microchip Electrophoresis Device
by: 陳弘育
Published: (2004) -
Development of Submicron Device Processes and Analysis of Device Degradation Mechanisms for InAs/AlSb HEMTs
by: Hong-Kai Liu, et al.
Published: (2011) -
Fabrication technique and characterization of silicon nanowire device
by: Kai-Shyang You, et al.
Published: (2004) -
Study of Laser Direct Writing Process for Fabrication of Flexible Electronic Device
by: Hsiung, Yi-Kai, et al.
Published: (2017)