Bismuth and Nitrogen Co-Doped Graphene Oxides for Electrochemical Sensing of Pb(II) Ions

• Main Authors: CHEN, WEI-SHEN, 陳韋慎
• Other Authors: WANG, CHIEN-TSUNG
• Format: Others
• Language: zh-TW
• Published: 2018
• Online Access: http://ndltd.ncl.edu.tw/handle/b6cm86

碩士 === 國立雲林科技大學 === 化學工程與材料工程系 === 106 === 　　Many researches have been developed to find effective electrochemical seasing of metal ions which are hazardous in aqueous solution. Electrochemical methods provide precise, sensitive, and fast response to the target species. Two-dimensional (2D) graphene sheets have large surface area to provide adsorptive sites. Atomic doping is a promising method of modifying graphene oxides, so as to promote sensing properties. 　　The goal of the study is to develop an electrochemical sensor, based on bismuth nitrogen co-doped graphene oxides (BiNGO). Graphene oxides was prepared by a modified Hummer’s method, and was doped with nitrogen by a wet chemical method. The Bi-doping was carried out by a photo-induced adsorption method. Square wave voltammetry (SWV) was used to measure electrochemical activity in the presence of lead ions in aqueous solution. 　　Results show that BiNGO has a sheet-like stack structure of graphene. By X-ray photoelectron spectroscopy, bismuth(III) ions and nitrogen atoms are co-doped in to graphene oxides. Raman spectroscopy shows that after co-doping with bismuth and nitrogen, the carbon sp3 population increase. The BiNGO sensors exhibit a linear relationship of sensitivity and concentration and have good sensitivity, high selectivity and repeatability. This study fund that the nitrogen doping improves the conductivity of graphene oxides and increase the response of lead ions; The bismuth doping facilitates diffusion of lead ions and increase the sensitivity to lead ions.