| Summary: | 碩士 === 國立雲林科技大學 === 電子工程系 === 106 === In This study demonstrates on the suppression of light reflection by nanostructures, and application to solar cells as anti-reflection. The characteristics of the pyramidal structure combined with the nanowire etching for surface reflectivity are discussed, Make use of phosphoric acid as n-type diffusion source with spin coating method to manufacture p-n junction, to achieve the goal of cost down.
In this experiment have a minimum reflectance of 3.2% by electroless etching for 60s, after thermal annealing at 400℃, the reflectivity drops to 2.9%, Pyramid structure combined with nanowire etching. Silver film deposited by magnetron sputtering has a minimum reflectivity of 2.5%. The electrical characteristic diffusion temperature of the p-n junction has the best electrical characteristics at 930 °C and the time at 20 min.
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