Numerical simulation analysis and optimization of microwave plasma chemical vapor deposition

• Main Authors: CHUN-YU LIN, 林均昱
• Other Authors: 許華倚
• Format: Others
• Language: zh-TW
• Published: 2018
• Online Access: http://ndltd.ncl.edu.tw/handle/3z37xv

碩士 === 國立臺北科技大學 === 機械工程系機電整合碩士班 === 106 === This thesis is analyzed, which is the cavity diamonds deposited in the microwave plasma jet chemical vapor deposition system that we currently used in laboratory. In this system process, by analyzing the cavity structure and the height of the internal holder, which is the deposition rate, uniform plasma density, and the uniformity of the diamond film during the process are improved. Therefore, I use the SolidWorks software to build a microwave plasma jet chemical deposition system at first. After that, I import images into the COMSOL software for simulation of electric field, electron temperature, electron density, and ion density, and estimate plasma size and location by simulation. This paper base on the plasma module, which it can make the simulation more suitable for the actual situation. In the cavity, the distribution of electric field, electron temperature, electron density and ion density in the cavity is investigated by changing the height of the internal holder. According to the simulation results, it is known that the ion distribution and density in the plasma and the electric field, electron density, and electron temperature are affected at different holders’ heights. As the holder is raised the ion density and the electric field, which it effect the antenna tip in the cavity. Therefore, we know the best holder height, which can produce the strongest electric field and ion density via the simulation results. To sum up, the best parameters is practice, which I can achieve the best results via experiment.