| Summary: | 碩士 === 國立臺北科技大學 === 材料科學與工程研究所 === 106 === At present, transparent electrode films with multilayer structures are often fabricated into devices and their current-voltage characteristics are well discussed. There are seldom studies only on transparent electrodes of multilayer structures. In the study, the three-layer pyramid thin film WO3/Ag/WO3 was prepared on a glass substrate by RF magnetron sputtering. The purpose was to obtain the current-voltage characteristic behavior between layers and analyze its current conduction mechanism. The thicknesses of WO3 and Ag films were changed from 50 to 60nm and 10 to 20nm, respectively, and were sputtered with or without electrodes. By using or not using the gold, silver, or copper electrodes, the researcher tried to explore the current-voltage characteristics of the films. The prepared films were characterized by X-ray diffraction, scanning electron microscopy, ultraviolet-visible light spectroscopy, and 4200SCS semiconductor extractor. The experimental results showed that compared with single-layer W films, the increased thickness of silver in the WAW structure would increase its conductivity, but the visible light transmittance would decrease significantly. When the film was combination of WO3 (50 nm) /Ag (10 nm) / WO3 (50 nm), it had an optimum optical transmittance of 80.20%. The experimental three-layer thin films exhibited a non-linear current-voltage characteristic. The experimental measurement of the uncoated upper electrode film contained a space charge limited (SCLC) transmission mechanism, which was a SCLC mechanism for trap filling when the low current was ohmic conduction and the current reached a Vtr value. The upper electrode was plated on the surface of the film to reduce the voltage of the film, and because its current-voltage characteristic was found to be free of SCLC transmission mechanism, the conductivity of the TCO could be improved after plating the upper metal electrode.
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